W25Q80BW
7.2.26
Chip Erase (C7h / 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write
Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “C7h” or “ 60h ” . The Chip Erase instruction sequence is shown in figure 24.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase
instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will
commence for a time duration of t CE (See AC Characteristics). While the Chip Erase cycle is in progress,
the Read Status Register instruction may still be accessed to check the status of the BUSY bit. The
BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is ready to
accept other instructions again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit
in the Status Register is cleared to 0. The Chip Erase instruction will not be executed if any page is
protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits (see Status Register Memory
Protection table).
/CS
Mode 3
0
1
2
3
4
5
6
7
Mode 3
CLK
Mode 0
Mode 0
Instruction (C7h/60h)
DI
(IO 0 )
DO
High Impedance
(IO 1 )
Figure 24. Chip Erase Instruction Sequence Diagram
- 44 -
相关PDF资料
W25X40BVZPIG IC SPI FLASH 4MBIT 8WSON
W25X64VZEIG IC FLASH 64MBIT 75MHZ 8WSON
W25X80AVDAIZ IC FLASH 16MBIT 100MHZ 8DIP
W29GL032CB7A IC FLASH 32MBIT 70NS 48TFBGA
W29GL064CB7S IC FLASH 64MBIT 70NS 48TSOP
W29GL128CL9T IC FLASH 128MBIT 90NS 56TSOP
W631GG6KB-15 IC DDR3 SDRAM 1GBIT 96WBGA
W9412G6IH-5 IC DDR-400 SDRAM 128MB 66TSSOPII
相关代理商/技术参数
W25Q80BWSSIP 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BWUXIG 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BWUXIP 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BWZPIG 功能描述:IC FLASH SPI 8MBIT 8WSON RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(单线) 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP,8-MSOP(0.118",3.00mm 宽) 供应商设备封装:8-MSOP 包装:带卷 (TR)
W25Q80BWZPIG TR 功能描述:IC FLASH SPI 8MBIT 8WSON RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP(0.465",11.8mm 宽) 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8
W25Q80BWZPIP 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25S243A 制造商:WINBOND 制造商全称:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
W25S243A-12 制造商:WINBOND 制造商全称:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM